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 NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range.
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COLLECTOR 3 1 BASE
* * * *
High Gain Bandwidth Product: fT = 2000 MHz Minimum Tightly Controlled hFE Range: hFE = 120 to 250 Low Feedback Capacitance: CRE = 0.45 pF Typical Pb-Free Package is Available
2 EMITTER
MAXIMUM RATINGS
Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Electrostatic Discharge Symbol VCBO VCEO VEBO IC ESD Value 30 15 3.0 50 Units V V V mA SOT-323/SC-70 CASE 419 STYLE 3
1
HBM - Class 1C MM - Class A
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) -55 to +150 Unit mW mW/C C/W C/W C 1 3M = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 3M M G G
MARKING DIAGRAM
RqJA RqJL TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION
Device NSF2250WT1 NSF2250WT1G Package SOT-323 SOT-323 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 5
Publication Order Number: NSF2250WT1/D
NSF2250WT1
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic Collector Cutoff Current VCB = 12 V, IE = 0 DC Current Gain VCE = 10 V, IC = 5.0 mA Collector Saturation Voltage IC = 10 mA, IB = 1.0 mA Gain Bandwidth Product VCE = 3 V, IE = -5.0 mA Output Capacitance VCB = 3 V, IE = 0 mA, f = 1.0 MHz Collector to Base Time Constant VCE = 3 V, IE = -5.0 mA, f = 31.9 MHz Feedback Capacitance VCB = 10 V, IE = 0 mA, f = 1.0 MHz Symbol ICBO - hFE 120 VCE(sat) - fT 2.0 COB - CCSrb'b CRE - 0.45 - - 0.7 3.5 1.2 ps 8.0 pF 2.3 - pF - 0.5 GHz - 250 V - 0.1 - Min Typ Max Unit mA
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 403C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150
Figure 1. Derating Curve
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2
NSF2250WT1
250 IC, COLLECTOR CURRENT (mA) 350 300 hFE, DC CURRENT GAIN 200 VCE = 12 V TA = 125C 250 200 25C 150 100 50 VCE = 5 V 0 0.1 1 10 hFE, DC CURRENT GAIN 100 0 0.1 1 10 IC, COLLECTOR CURRENT 100 -55C
150 5V 100 3V
50
Figure 2. DC Current Gain versus Collector Current
10,000 ft, GAIN BANDWIDTH PRODUCT (MHz)
Figure 3. DC Current Gain versus Collector Current
CRE, FEEDBACK CAPACITANCE (pF)
10 f = 1 MHz TA = 25C
5V VCE = 12 V 1000
1
100 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100
0.1
1
10 VCB, COLLECTOR BASE VOLTAGE (VOLTS)
100
Figure 4. Gain Bandwidth Product versus Collector Current
1.6 1.4 Cob, CAPACITANCE (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 f = 1 MHz TA = 25C
Figure 5. Device Capacitance versus Collector Base Voltage
5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS)
35
Figure 6. Output Capacitance
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NSF2250WT1
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 2.5 V, IC = 2.5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.926 0.855 0.667 0.513 0.411 0.342 0.297 0.261 0.236 0.218 0.205 0.190 0.215 0.230 0.236 -14.124 -26.794 -47.287 -60.931 -70.342 -77.461 -84.335 -90.986 -97.798 -104.905 -112.449 -147.224 -171.677 -172.291 -155.125 6.803 6.224 5.033 4.072 3.326 2.831 2.445 2.154 1.935 1.755 1.617 1.200 1.011 0.889 0.866 162.639 148.649 126.317 110.981 100.524 92.771 86.222 80.493 75.382 70.672 66.258 48.079 33.299 20.271 10.984 0.018 0.034 0.058 0.074 0.090 0.104 0.117 0.131 0.144 0.155 0.168 0.219 0.258 0.294 0.340 82.792 73.296 62.292 58.641 57.333 56.067 55.166 53.800 52.087 50.745 49.386 42.418 35.910 31.024 28.868 0.973 0.921 0.807 0.736 0.694 0.670 0.651 0.637 0.627 0.617 0.608 0.575 0.544 0.510 0.450 -7.062 -12.818 -19.210 -21.979 -23.695 -25.311 -27.095 -29.095 -31.026 -33.167 -35.352 -46.016 -58.267 -68.713 -81.517
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 3 V, IC = 5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.858 0.733 0.493 0.362 0.288 0.242 0.212 0.190 0.177 0.167 0.163 0.176 0.210 0.226 0.239 -20.126 -36.552 -58.358 -69.976 -78.272 -85.666 -93.237 -101.308 -109.656 -118.336 -127.188 -164.287 -174.155 -159.754 -144.224 12.065 10.452 7.472 5.544 4.337 3.582 3.048 2.656 2.375 2.145 1.968 1.435 1.187 1.034 0.995 156.269 139.116 115.678 103.053 94.866 88.592 83.504 78.785 74.561 70.348 66.700 50.083 35.998 23.227 14.088 0.017 0.029 0.047 0.062 0.075 0.090 0.103 0.116 0.128 0.141 0.153 0.203 0.246 0.288 0.340 78.802 69.100 62.893 62.188 61.876 61.259 59.861 58.802 57.017 55.629 53.851 47.574 41.767 36.614 34.458 0.945 0.850 0.712 0.653 0.621 0.603 0.590 0.580 0.573 0.563 0.555 0.528 0.501 0.469 0.413 -10.278 -16.656 -20.497 -21.545 -22.551 -23.975 -25.526 -27.405 -29.334 -31.402 -33.301 -43.164 -54.213 -63.689 -74.387
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NSF2250WT1
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 3 V, IC = 10 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.643 0.459 0.289 0.225 0.192 0.172 0.161 0.156 0.155 0.156 0.163 0.201 0.237 0.247 0.259 -35.313 -53.013 -70.035 -80.644 -91.607 -102.488 -113.748 -125.151 -135.549 -145.469 -153.718 -175.526 -159.398 -147.097 -133.925 15.384 11.650 7.214 5.260 4.122 3.419 2.929 2.575 2.313 2.099 1.925 1.415 1.173 1.021 0.982 140.063 121.580 104.714 96.934 91.266 86.447 82.212 78.231 74.282 70.461 67.004 50.535 36.726 24.113 15.023 0.015 0.024 0.040 0.053 0.068 0.082 0.096 0.107 0.119 0.131 0.141 0.193 0.240 0.289 0.346 69.823 63.636 65.531 66.205 66.344 64.574 63.206 61.822 60.606 59.154 57.409 52.024 46.396 41.529 38.491 0.864 0.738 0.647 0.618 0.598 0.584 0.572 0.561 0.553 0.543 0.536 0.505 0.477 0.444 0.382 -14.048 -17.013 -17.265 -18.444 -20.216 -22.273 -24.418 -26.828 -28.821 -31.132 -33.247 -43.365 -54.652 -64.094 -75.243
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 10 V, IC = 5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.877 0.765 0.539 0.406 0.334 0.286 0.252 0.227 0.208 0.190 0.179 0.162 0.185 0.200 0.208 -17.278 -31.274 -49.213 -57.758 -63.347 -68.461 -73.828 -79.612 -86.135 -93.121 -100.507 -139.494 -167.453 -175.534 -159.130 11.972 10.386 7.575 5.678 4.464 3.698 3.159 2.766 2.474 2.237 2.047 1.495 1.242 1.082 1.050 157.707 140.944 118.277 105.478 97.467 91.347 86.264 81.745 77.803 73.571 70.150 53.949 40.156 27.306 18.234 0.012 0.022 0.037 0.049 0.062 0.073 0.085 0.095 0.106 0.116 0.125 0.169 0.207 0.247 0.296 81.580 72.099 66.849 66.104 65.473 64.460 63.014 62.100 60.785 59.532 57.905 52.604 47.697 44.045 42.716 0.972 0.900 0.803 0.757 0.729 0.717 0.706 0.697 0.690 0.682 0.674 0.652 0.631 0.609 0.557 -7.268 -12.126 -14.944 -16.182 -17.508 -19.007 -20.874 -22.551 -24.442 -26.405 -28.385 -37.411 -47.834 -55.962 -65.696
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NSF2250WT1
VCE = 2.5 V, IC = 2.5 mA S11
j25 j50 j100
S12
120
90 60
150 j10 3 GHz 3 GHz 0 10 25 50 100 0.05 GHz -j10 -150 0 180 0.05 GHz 0.2 0.3 0.4
30
0.5 0
-30
-j25 -j50
-j100 -120 -90 -60
Figure 7. Input Reflection Coefficient
Figure 8. Reverse Transmission Coefficient
S22
j25
j50 j100
S21
120
90 60
150 j10 0.05 GHz 0 10 25 50 100 0.05 GHz 3 GHz -j10 -150 0 180 3 GHz 24 6 8
30
10 0
-30
-j25 -j50
-j100 -120 -90 -60
Figure 9. Output Reflection Coefficient
Figure 10. Forward Transmission Coefficient
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NSF2250WT1
VCE = 3.0 V, IC = 10 mA S11
j25 j50 j100
S12
120
90 60
150 j10 3 GHz
3 GHz
30
0
10
25
50
100
0
180
0.05 GHz
0.2
0.3
0.4
0.5 0
-j10
0.05 GHz -150 -30
-j25 -j50
-j100 -120 -90 -60
Figure 11. Input Reflection Coefficient
Figure 12. Reverse Transmission Coefficient
S22
j25
j50 j100
S21
120
90 60
150 j10
0.05 GHz
30
0
10
25
50
100
0 0.05 GHz
180
3 GHz
48
12
16
20 0
3 GHz -j10 -150 -30
-j25 -j50
-j100 -120 -90 -60
Figure 13. Output Reflection Coefficient
Figure 14. Forward Transmission Coefficient
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NSF2250WT1
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 2.5 V, IC = 2.5 mA 50 100 200 400 600 800 1000 1500 2000 0.627 0.626 0.622 0.608 0.589 0.566 0.541 0.476 0.397 176.455 172.821 165.583 151.867 138.455 126.103 114.811 89.445 68.206 1.6218 1.6153 1.6042 1.5630 1.5099 1.4461 1.3613 1.1404 0.8928 -3.3808 -6.8404 -13.205 -26.289 -39.579 -52.382 -65.315 -98.892 -133.58 0.003 0.008 0.014 0.031 0.052 0.076 0.102 0.170 0.233 81.692 87.954 92.620 96.834 96.285 94.675 90.577 78.774 68.003 1.006 1.002 1.005 1.006 1.016 1.022 1.026 1.014 0.922 -1.7455 -3.5734 -6.7806 -13.779 -21.141 -28.553 -36.519 -57.448 -77.708
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 3 V, IC = 5 mA 50 100 200 400 600 800 1000 1500 2000 0.781 0.780 0.776 0.759 0.743 0.725 0.709 0.674 0.620 176.95 174.093 168.012 156.688 145.893 135.660 126.241 103.465 81.3686 1.7732 1.7625 1.7622 1.7285 1.6911 1.6441 1.5817 1.4275 1.1968 -3.0425 -5.9870 -11.733 -23.541 -35.161 -46.886 -58.697 -90.316 -123.89 0.004 0.006 0.013 0.029 0.047 0.071 0.095 0.172 0.249 85.472 88.871 94.408 100.70 100.93 98.938 95.803 85.633 73.589 1.006 1.002 1.004 1.006 1.015 1.024 1.031 1.037 0.957 -1.6658 -3.5604 -6.7723 -13.627 -20.799 -28.057 -35.921 -56.915 -77.953
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C)
Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang
VCE = 3 V, IC = 10 mA 50 100 200 400 600 800 1000 1500 2000 0.867 0.863 0.851 0.821 0.795 0.782 0.773 0.765 0.730 176.898 173.941 167.942 157.527 148.933 139.487 131.501 110.253 87.937 1.8601 1.8432 1.8370 1.7814 1.7303 1.6831 1.6327 1.4975 1.2711 -3.2938 -6.3479 -12.359 -23.95 -34.993 -46.443 -57.916 -89.11 -123.21 0.004 0.007 0.014 0.029 0.045 0.067 0.091 0.169 0.253 88.195 90.044 91.598 96.128 97.955 98.521 96.532 88.005 76.070 1.006 1.001 1.003 1.003 1.011 1.018 1.024 1.031 0.950 -1.7132 -3.6916 -6.9503 -13.909 -21.082 -28.456 -36.296 -57.462 -78.777
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8
NSF2250WT1
VCE = 2.5 V, IC = 2.5 mA S11
j25 j50 j100
S12
120
90
2 GHz 60
150 j10 2 GHz
30
0
10 25 0.05 GHz
50
100
0
180
0.05 GHz
0.1
0.15
0.2 0.25 0
-j10 -150 -30
-j25 -j50
-j100 -120 -90 -60
Figure 15. Input Reflection Coefficient
Figure 16. Reverse Transmission Coefficient
S22
j25
j50 j100
S21
120
90 60
150 j10
30
0
10
25
50
100 0.05 GHz
0
180
0.05
0.1
0.15
0.2 0.25 0 0.05 GHz
-j10 -150
2 GHz -30
-j25
2 GHz -j50
-j100 -120 -90 -60
Figure 17. Output Reflection Coefficient
Figure 18. Forward Transmission Coefficient
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NSF2250WT1
PACKAGE DIMENSIONS
SC-70 (SOT-323) CASE 419-04 ISSUE M
D e1
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
HE
1 2
E
b e
A 0.05 (0.002)
A2 L
c
DIM A A1 A2 b c D E e e1 L HE
MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20
2.00
MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40
MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047
0.079
INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055
0.095
A1
STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025
1.9 0.075 0.9 0.035 0.7 0.028
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSF2250WT1/D


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